The BF817 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP4 package with different lead forming options.

With the robust coplanar double mold structure, BF817 series provide the most stable isolation feature. 

Features

• High isolation 5000 VRMS
• CTR flexibility available see order information
• DC input with transistor output
• Operating temperature range - 55 °C to 110 °C
• REACH compliance
• Halogen free
• MSL class 1
• Regulatory Approvals
  • UL - UL1577 
  • VDE - EN60747-5-5(VDE0884-5)
  • CQC – GB4943.1, GB8898

Applications  

• Switch mode power supplies
• Programmable controllers
• Household appliances
• Office equipment